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AGIPNEWS6954

28/3/2009 09:36 GMT
ag-IP-news
Crocus Technologies Granted Two Additional Patents for MRAM Technology

SUNNYVALE, CA - Crocus Technology continues to expand the reach of its Intellectual Property (IP) coverage by announcing two new patent granted by the US Patent and Trademark Office and the French Institut National de la Propriete Industrielle (INPI), a press release by Crocus stated.

The addition of these patents to Crocus' portfolio deepens the company's foundation of innovation in the development of MRAM physics, materials, processing and design.

“We are more driven than ever under our program of innovation, both internally and with our IP partners, to expand the technologies that will make MRAM memory pervasive,” CEO of Crocus Technology Jean Pierre Braun said.

“These two patents are welcome additions to Crocus’ IP position. Our expanding IP base is an essential element to building a strong MRAM business,” he added.

The new patents cover use in specialized memory chips known as Content Addressable Memories (CAM), opening the way to denser, faster and less power-hungry CAM, as well as innovative developments in the physics, materials, and manufacturing of MRAM chips with high data stability.

Crocus Technology's new patents, and pending patents, are the result of work performed by Crocus engineers and scientists, as well as efforts developed through exclusive long-term partnerships with Spintec, the leading European spintronics laboratory jointly operated by CEA and CNRS.

“This unparalleled collection of patents leads the industry in development and growth of MRAM technology,” CTO and founder of Crocus Technology Jean Pierre Nozieres commented.

“Crocus' portfolio holds significant coverage in fundamental and structural aspects in the areas of Thermal Assisted Switching and Spintorque technology, with key inventions dating back more than ten years—far ahead of many of today's participants in this market,” he continued.

Crocus Technology is an early-stage developer of MRAM technology for dense, non-volatile, high-speed, scalable memories. Its MRAM technology was conceived in the Grenoble-based Spintec laboratory, a world leading R&D center in Spintronics affiliated with two famous French labs, CEA and CNRS.


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